International Display Workshops General Incorporated Association

2:15 PM - 2:30 PM

[AMD2-4L] Temperature Dependence Thermal Conductivity Measurement of Indium-Gallium-Zinc-Oxide Thin Films Utilizing 3ω Method

*MD RAUF UL KARIM KHAN1, Shim Chang-Hoon1, Reiji Hattori1, Michitaka Ohtaki1, Koji Miyazaki2 (1. Kyushu University(Japan), 2. Kyushu Institute of Technology(Japan))

Three-omega method, Thermal conductivity, Nano-crystalline, InGaZnO, Thin film

https://doi.org/10.36463/idw.2020.0162

The temperature dependence of the cross-plane thermal conductivity of Indium-Gallium-Zinc-Oxide (IGZO) thin film was measured using a differential three-omega method. The IGZO thin films were deposited on Al2O3 substrate by DC sputtering at room temperature. The thermal conductivities were observed to be 1.6, 1.8, and 2.6 W/(m·K) at some different oxygen partial pressures, 0%, 10%, and 65%, respectively. Furthermore, the thermal conductivity of IGZO thin film is decreasing with increasing the measurement ambient temperature according to the crystalline material typical characteristics. These results notify that a crystallinity exists inside the IGZO films and this crystalline phase governs the heat conduction into IGZO films.