16:10 〜 18:10
[AMDp1-1] Characteristic of BCE Type IGZO Thin Film Transistor Device with Mo-alloy serving as a barrier layer for Cu electrodes
barrier layer, material properties, electrical properties
The a-IGZO TFT with MoTiNi/Cu as S/D electrode exhibits lower VTH and improved performance of avoiding Ti oxidation compared to MoTi/Cu devices. The TEM and linescan of EDS are also used to analyze material properties of samples, which is in close agreement with the obtained electrical properties.