16:10 〜 18:10
[AMDp1-3L] Enhancement in Reliability of a-InZnO TFT by Fluorine-Doped Polysilsesquioxane Passivation with Spray Pyrolysis
Inorganic-organic passivation, solution-processed, Oxide semiconductor, thin-film transistors
We report the effect of inorganic-organic passivation deposited by spray pyrolysis technique on enhancing the stability of a-InZnO thin-film transistors. We achieved better device stability by incorporating spray coated fluorine-doped passivation layer which protects the channel layer from atmospheric effects.