International Display Workshops General Incorporated Association

16:10 〜 18:10

[AMDp1-3L] Enhancement in Reliability of a-InZnO TFT by Fluorine-Doped Polysilsesquioxane Passivation with Spray Pyrolysis

*Aimi Syairah Safaruddin1, Juan Paolo S. Bermundo1, Michael Paul A. Jallorina1, Mami N. Fujii1, Yukiharu Uraoka1 (1. Nara Institute of Science and Technology(Japan))

Inorganic-organic passivation, solution-processed, Oxide semiconductor, thin-film transistors

https://doi.org/10.36463/idw.2020.0212

We report the effect of inorganic-organic passivation deposited by spray pyrolysis technique on enhancing the stability of a-InZnO thin-film transistors. We achieved better device stability by incorporating spray coated fluorine-doped passivation layer which protects the channel layer from atmospheric effects.