International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 27 (IDW '20)

Proceedings of the International Display Workshops Volume 27 (IDW '20)

Dec 9, 2020 - Dec 11, 2020
Virtual Conference

4:10 PM - 4:25 PM

[FLX2-4L] Low Temperature Solution Processed Hybrid Gate Insulators for High Performance Oxide Thin-Film Transistors

*Juan Paolo Bermundo1, Ployrung Kesorn1, Mami N. Fujii1, Yasuaki Ishikawa2, Yukiharu Uraoka1 (1. Nara Institute of Science and Technology(Japan), 2. Aoyama Gakuin University(Japan))

Low temperature process, high-k gate insulator, solution process, high mobility

https://doi.org/10.36463/idw.2020.0895

High mobilities of ~30 cm2/Vs in amorphous InGaZnO thin-film transistors were realized through application of a low temperature solution-processed hybrid gate insulator. The combination of high-k BaTiOx nanoparticles and a polysiloxane polymer matrix enables a lower process temperature of 300°C from 650 °C while ensuring enhanced performance and low leakage current.