International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 27 (IDW '20)

Proceedings of the International Display Workshops Volume 27 (IDW '20)

Dec 9, 2020 - Dec 11, 2020
Virtual Conference

5:40 PM - 6:00 PM

[FMC1-4] LaAlOx/Al2O3 Gate Insulator for Amorphous InGaZnO TFTs to Suppress Permittivity Scattering of Lanthanum Oxide

*Won-Young Kim1, Yuelin Chen1, Sung-Ho Noh1, Yong-Sang Kim1 (1. Sungkyunkwan University(Korea))

LaAlOx/Al2O3, high-k, a-IGZO TFTs

https://doi.org/10.36463/idw.2020.0238

Although lanthanum oxide has a high dielectric constant, it is not suitable as a gate insulator for TFTs due to its hygroscopic property. To suppress this, we propose a fabrication of a LaAlOx/Al2O3 gate insulator by aluminum doping and adding Al2O3 barrier on lanthanum oxide.