17:40 〜 18:00
[FMC1-4] LaAlOx/Al2O3 Gate Insulator for Amorphous InGaZnO TFTs to Suppress Permittivity Scattering of Lanthanum Oxide
LaAlOx/Al2O3, high-k, a-IGZO TFTs
Although lanthanum oxide has a high dielectric constant, it is not suitable as a gate insulator for TFTs due to its hygroscopic property. To suppress this, we propose a fabrication of a LaAlOx/Al2O3 gate insulator by aluminum doping and adding Al2O3 barrier on lanthanum oxide.