International Display Workshops General Incorporated Association

16:10 〜 18:10

[FMCp3-5] Boron ion implantation for resistance control technique of amorphous-InGaZnO film

*Toshimasa Ui1, Ryugo Fujimoto1, Keisuke Yasuta1, Daisuke Matsuo2, Toshihiko Sakai2, Yoshitaka Setoguchi2, Eiji Takahashi2, Yasunori Andoh2, Junichi Tatemichi1 (1. NISSIN ION EQUIPMENT CO., LTD.(Japan), 2. NISSIN ELECTRIC CO., LTD.(Japan))

Boron, Implantation, IGZO, Resistance

https://doi.org/10.36463/idw.2020.0315

As a next-generation material, Amorphous-InGaZnO (a-IGZO) films were prepared by inductively coupled plasma sputtering. In order to further utilize a-IGZO films, boron ion implantations in the a-IGZO films and analyses were carried out. As a result, we obtain sheet resistance control techniques, which can be applied to a-IGZO device processing.