16:10 〜 18:10
[FMCp3-5] Boron ion implantation for resistance control technique of amorphous-InGaZnO film
Boron, Implantation, IGZO, Resistance
As a next-generation material, Amorphous-InGaZnO (a-IGZO) films were prepared by inductively coupled plasma sputtering. In order to further utilize a-IGZO films, boron ion implantations in the a-IGZO films and analyses were carried out. As a result, we obtain sheet resistance control techniques, which can be applied to a-IGZO device processing.