16:10 〜 18:10

[FMCp3-5] Boron ion implantation for resistance control technique of amorphous-InGaZnO film

*Toshimasa Ui¹, Ryugo Fujimoto¹, Keisuke Yasuta¹, Daisuke Matsuo², Toshihiko Sakai², Yoshitaka Setoguchi², Eiji Takahashi², Yasunori Andoh², Junichi Tatemichi¹ (1. NISSIN ION EQUIPMENT CO., LTD.(Japan), 2. NISSIN ELECTRIC CO., LTD.(Japan))

Boron, Implantation, IGZO, Resistance

https://doi.org/10.36463/idw.2020.0315