International Display Workshops General Incorporated Association

4:10 PM - 6:10 PM

[FMCp3-8] Development of Blackening Materials for Cu Wiring TFTs with H2O2 based etchant

*Keita Umemoto1, Daisuke Kaneko1, Shin Okano1, Yukiya Sugiuchi1, Takeshi Ohtomo1, Ichoro Shiono1 (1. Mitsubishi Materials Corporation(Japan))

TFT, Low reflectivity, Cu bottom gate, H2O2 etchant

https://doi.org/10.36463/idw.2020.0325

We’ve developed blackening materials with high durability for TFTs wiring by using Nb based materials in IDW’19. However, the Nb based materials could not dissolve to H2O2 based etchant. In this paper, we improved the H2O2 etching properties of the blackening material remaining high durability.