Inductively Coupled Plasma Sputtering System for Oxide Semiconductors for a Large Area Deposition

Daisuke Matsuo

doi:https://doi.org/10.36463/idw.2020.0331

4:10 PM - 6:10 PM

[FMCp3-10L] Inductively Coupled Plasma Sputtering System for Oxide Semiconductors for a Large Area Deposition

*Daisuke Matsuo¹, Takuya Ikeda¹, Shigeaki Kishida¹, Yoshitaka Setoguchi¹, Yasunori Andoh¹, Eiji Takahashi¹ (1. NISSIN ELECTRIC CO., LTD.(Japan))

IGZO, sputtering, ICP

https://doi.org/10.36463/idw.2020.0331

We have developed a Gen.4.5 size ICP sputtering system. The film density was close to the theoretical value and the in-plane uniformity was ± 1% or less. The thickness uniformity was ± 2.2%. By using the ICP sputtering system, both high film density and thickness uniformity could be achieved.

Proceedings of the International Display Workshops Volume 27 (IDW '20)

[FMCp3-10L] Inductively Coupled Plasma Sputtering System for Oxide Semiconductors for a Large Area Deposition