Highly Efficient Quantum Dot Light-emitting Diode Based on Properly Charge Balanced and Suppressed Interfacial Exciton Quenching Process

Raju Lampande

doi:https://doi.org/10.36463/idw.2020.0800

11:20 〜 11:40

[MEET4-3(Invited)] Highly Efficient Quantum Dot Light-emitting Diode Based on Properly Charge Balanced and Suppressed Interfacial Exciton Quenching Process

Raju Lampande¹, *Jang Hyuk Kwon¹ (1. Kyung Hee University (Korea))

Quantum Dot , LED, Red

https://doi.org/10.36463/idw.2020.0800

We report a high efficiency inverted red indium phosphide (InP) based quantum dot light-emitting diode (QLED) by optimizing charge balance and suppressing interfacial exciton quenching process. Our optimized red InP-QLED using new deep HOMO level and high mobility hole transport layers and sol-gel ZnMgO showed external quantum efficiency of 21.8 % and current efficiency of 23.4 cd/A.

Proceedings of the International Display Workshops Volume 27 (IDW '20)

[MEET4-3(Invited)] Highly Efficient Quantum Dot Light-emitting Diode Based on Properly Charge Balanced and Suppressed Interfacial Exciton Quenching Process