16:10 〜 18:10
[OLEDp2-1] Investigation Ink-jet Printed Quantum-dot Light-emitting Diodes Lifetime Properties by IPL Post-treatment of ZnO NPs Electron Transport Layer
Quantum-dot Light-emitting Diodes (QLED), Ink-jet Printing, Intense Pulsed Light (IPL)
By applying intense-pulsed light (IPL) post-treatment to zinc-oxide nanoparticles (ZnO NPs) to stabilize the hole-electron injection within the quantum-dot emission layer (QD EML) of ink-jet printed quantum-dot light-emitting diodes (QLEDs), the device lifetime properties have been remarkably improved.