16:10 〜 18:10
[OLEDp2-4L] Investigation of the Inverted ZnCuInS/ZnS Based Quantum-Dot Light-Emitting Diodes with the Sputtered ZnO Film Layers
Cadmium-free quantum dot light emitting diodes (QLED), , sputtered Zinc Oxide,, quantum yield (QY), inverted structure.
The performance of the fabricated QLED was measured, using the sputtered ZnO film. The thickness of the ZnO film was varied to control the electron mobility. Consequently, the maximum current efficiency of 3.96 cd/A, and EQE 2.13% was achieved for the commercially available ZnCuInS/ZnS based QLEDs at yellow emission.