2:00 PM - 2:20 PM
[AMD1-4L(Invited)] Control of Switching Behavior through Oxygen Vacancy Modulation in p-Channel Tin Monoxide Thin-Film Transistor
oxide semiconductor, p-channel transistor, tin monoxide, thin-film transistor, complementary metal oxide semiconductor
We demonstrate an oxygen vacancy (VO)-mediated electrical characteristic transition in a p-channel tin monoxide (SnO) transistor. Only p-channel characteristic in SnO transistor can be switched to an ambipolar characteristics by increasing VO near back-channel, which suggests that the VO at the back-channel can be a possible origin for the ambipolar behavior in the SnO transistors.