Control of Switching Behavior through Oxygen Vacancy Modulation in p-Channel Tin Monoxide Thin-Film Transistor

2:00 PM - 2:20 PM

[AMD1-4L(Invited)] Control of Switching Behavior through Oxygen Vacancy Modulation in p-Channel Tin Monoxide Thin-Film Transistor

*Taikyu Kim¹, Jae Kyeong Jeong¹ (1.Hanyang University (Korea))

oxide semiconductor, p-channel transistor, tin monoxide, thin-film transistor, complementary metal oxide semiconductor

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