A Study on the Radiation Hardness of Amorphous Oxide Thin-Film Transistors

Hyuck-In Kwon

doi:https://doi.org/10.36463/idw.2021.0136

15:10 〜 15:30

[AMD2-2(Invited)] A Study on the Radiation Hardness of Amorphous Oxide Thin-Film Transistors

*Hyuck-In Kwon¹、Min-Gyu Shin¹、Seong-Hyun Hwang¹、Kie Yatsu¹ (1.Chung-Ang University (Korea))

AOS TFT, proton irradiation, radiation tolerance

https://doi.org/10.36463/idw.2021.0136

We investigated the effects of film thickness (t_ch) on the radiation hardness of indium-gallium-tin oxide (IGTO) thin films transistors (TFTs). The IGTO TFT with the 12 nm thick channel layer exhibited the best electrical performance and radiation tolerance. The radiation tolerance significantly decreased as t_ch increased.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[AMD2-2(Invited)] A Study on the Radiation Hardness of Amorphous Oxide Thin-Film Transistors