Oxide Thin-film Transistors Driven from Substrate Backside Using Three-Dimensional Wires

Hiroshi Tsuji

doi:https://doi.org/10.36463/idw.2021.0143

15:50 〜 16:10

[AMD2-4L] Oxide Thin-film Transistors Driven from Substrate Backside Using Three-Dimensional Wires

*Hiroshi Tsuji¹、Masashi Miyakawa¹、Mitsuru Nakata¹ (1.NHK (Japan))

Tiled display, Bezel-less panel, Thin-film transistor, Three-dimensional wire, In-Sn-Zn-O

https://doi.org/10.36463/idw.2021.0143

This study proposes an oxide thin-film transistor (TFT) structure that enables signal input from the backside of the polyimide film substrate using three-dimensional wires that penetrate the substrate. TFTs with channel lengths down to 3 μm exhibit clear switching behavior with an on/off current ratio of over 10⁷.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[AMD2-4L] Oxide Thin-film Transistors Driven from Substrate Backside Using Three-Dimensional Wires