Monolithic Integration of Sn-Doped IGZO Transistor and Ferroelectric Memory for High-Density Memory Applications

Masaharu Kobayashi

doi:https://doi.org/10.36463/idw.2021.0145

09:00 〜 09:20

[AMD4/AIS6-1(Invited)] Monolithic Integration of Sn-Doped IGZO Transistor and Ferroelectric Memory for High-Density Memory Applications

*Masaharu Kobayashi¹、Jixuan Wu¹、Fei Mo¹、Takuya Saraya¹、Toshiro Hiramoto¹、Kohei Nishiyama²、Mototaka Ochi²、Hiroshi Goto³ (1.The University of Tokyo (Japan)、2.Kobe Steel, Ltd. (Japan)、3.Kobelco Research Institute, Inc. (Japan))

monolithic integration, IGZO, ferroelectric memory

https://doi.org/10.36463/idw.2021.0145

We have developed and integrated mobility-enhanced FET and wakeup-free ferroelectric capacitor by using Sn-doped InGaZnO, and demonstrated 1T1C FeRAM cell operation for 3D embedded memory. We have studied the impact of thin-film access transistor on 1T1C cell operation, and investigated the physics of mobility enhancement.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[AMD4/AIS6-1(Invited)] Monolithic Integration of Sn-Doped IGZO Transistor and Ferroelectric Memory for High-Density Memory Applications