International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 28 (IDW '21)

Proceedings of the International Display Workshops Volume 28 (IDW '21)

2021年12月1日 〜 2021年12月3日
Virtual Conference

[AMDp1-7] Hydrogenated Amorphous Silicon Film Transistor Fabrication with Back-Channel-Oxidized Method

*Meng Chen1、Zhengxin Xu2、Zhixiong Jiang1、Shiyu Dong1、Hantao Yang1、Lingzhi Wu2、Houkuan Sun2、Lei Guo2、Wufeng Ren2、Wu Cao1、Hongyuan Xu1、Jun Seo2 (1.TCL China Star Optoelectronics Technology Co., Ltd (China)、2.Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd (China))

amorphous silicon, thin film transistor, back-channel-oxidized method

https://doi.org/10.36463/idw.2021.0202

An a-Si:H thin film transistor was fabricated with back-channel-oxidized(BCO) method. The mobility of the BCO TFT was 0.42 cm2/V·s, and stability characteristic is comparable with back-channel-etched(BCE) type TFT. It were studied that different n+ layer thickness, oxidation time and pre-treatment influenced BCO TFT device characteristics.