[AMDp1-8L] Investigation of NBIS Degradation Mechanism in Oxide TFT Assisted by Charge Trap Phenomena
NBIS degradation, Light irradiation, IGZO-TFT, Charge trap layer (CTL)
IGZO-TFT with CTL was designed to understand the degradation mechanism of NBIS. The TFT showed stable retention characteristics after applying negative Vg with light irradiation. It shows that positive charge is injected to CTL through the tunneling layer. It is suggested that holes are the possible origin of NBIS degradation.