International Display Workshops General Incorporated Association

[AMD4/AIS6-1(Invited)] Monolithic Integration of Sn-Doped IGZO Transistor and Ferroelectric Memory for High-Density Memory Applications

AMD Workshop

*Masaharu Kobayashi1, Jixuan Wu1, Fei Mo1, Takuya Saraya1, Toshiro Hiramoto1, Kohei Nishiyama2, Mototaka Ochi2, Hiroshi Goto3 (1.The University of Tokyo (Japan), 2.Kobe Steel, Ltd. (Japan), 3.Kobelco Research Institute, Inc. (Japan))

monolithic integration, IGZO, ferroelectric memory

https://doi.org/10.36463/idw.2021.0145

We have developed and integrated mobility-enhanced FET and wakeup-free ferroelectric capacitor by using Sn-doped InGaZnO, and demonstrated 1T1C FeRAM cell operation for 3D embedded memory. We have studied the impact of thin-film access transistor on 1T1C cell operation, and investigated the physics of mobility enhancement.