Trap-Minimized Printed Thin-Film Transistors Based on Layered-Crystalline Organic Semiconductors

Tatsuo Hasegawa, Gyo Kitahara, Mitsuhiro Ikawa, Satoshi Matsuoka, Shunto Arai, Seiji Tsuzuki, Toshiki Higashino, Satoru Inoue

doi:https://doi.org/10.36463/idw.2021.0925

1:30 PM - 1:50 PM

[FLX2/AMD3-1(Invited)] Trap-Minimized Printed Thin-Film Transistors Based on Layered-Crystalline Organic Semiconductors

*Tatsuo Hasegawa¹, Gyo Kitahara¹, Mitsuhiro Ikawa¹, Satoshi Matsuoka¹, Shunto Arai¹, Seiji Tsuzuki¹, Toshiki Higashino², Satoru Inoue¹ (1.University of Tokyo (Japan), 2.AIST (Japan))

Organic Semiconductor, Thin-Film Transistor, Printed Electronics

https://doi.org/10.36463/idw.2021.0925

We present our recent studies to develop all-printed thin-film transistors (TFTs) that exhibit both high-performance and sharp-switching operations. Our key concept is to take advantage of self-organizing characteristics of highly layered-crystalline organic semiconductors (OSCs) in manufacturing uniform channel layers interfaced with highly lyophobic gate-dielectric surfaces, eventually providing trap-minimized all-printed TFTs.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[FLX2/AMD3-1(Invited)] Trap-Minimized Printed Thin-Film Transistors Based on Layered-Crystalline Organic Semiconductors