Role of Boron in Amorphous-InGaZnO Film for Resistance Control Technique

Keisuke Yasuta, Toshimasa Ui, Tomokazu Nagao, Daisuke Matsuo, Toshihiko Sakai, Yoshitaka Setoguchi, Eiji Takahashi, Yasunori Andoh, Junichi Tatemichi

doi:https://doi.org/10.36463/idw.2021.0956

4:00 PM - 4:20 PM

[FLX5/FMC6-3] Role of Boron in Amorphous-InGaZnO Film for Resistance Control Technique

*Keisuke Yasuta¹, Toshimasa Ui¹, Tomokazu Nagao¹, Daisuke Matsuo², Toshihiko Sakai², Yoshitaka Setoguchi², Eiji Takahashi², Yasunori Andoh², Junichi Tatemichi¹ (1.Nissin Ion Equipment Co., Ltd. (Japan), 2.Nissin Electric Co., LTd. (Japan))

Boron, Implantation, IGZO, Resistance

https://doi.org/10.36463/idw.2021.0956

As a next-generation electronics material, amorphous indium-gallium-zinc oxide (a-IGZO) film devices were investigated. In order to further utilize a-IGZO films, we carried out boron ion implantation and analyzed the implanted a-IGZO using Hall measurements with wet etching processes. As a result, we clarified that the implanted boron decreases a-IGZO resistance.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[FLX5/FMC6-3] Role of Boron in Amorphous-InGaZnO Film for Resistance Control Technique