International Display Workshops General Incorporated Association

16:00 〜 16:20

[FLX5/FMC6-3] Role of Boron in Amorphous-InGaZnO Film for Resistance Control Technique

*Keisuke Yasuta1、Toshimasa Ui1、Tomokazu Nagao1、Daisuke Matsuo2、Toshihiko Sakai2、Yoshitaka Setoguchi2、Eiji Takahashi2、Yasunori Andoh2、Junichi Tatemichi1 (1.Nissin Ion Equipment Co., Ltd. (Japan)、2.Nissin Electric Co., LTd. (Japan))

Boron, Implantation, IGZO, Resistance

https://doi.org/10.36463/idw.2021.0956

As a next-generation electronics material, amorphous indium-gallium-zinc oxide (a-IGZO) film devices were investigated. In order to further utilize a-IGZO films, we carried out boron ion implantation and analyzed the implanted a-IGZO using Hall measurements with wet etching processes. As a result, we clarified that the implanted boron decreases a-IGZO resistance.