Development of Highly Heat-Resistant, Dry-Etchable Blackening Film for TFT Wiring

Daisuke Kaneko, Keita Umemoto, Hiromi Nakazawa, Shin Okano, Yukiya Sugiuchi, Takeshi Ohtomo

doi:https://doi.org/10.36463/idw.2021.0254

5:50 PM - 6:10 PM

[FMC7/AIS9-3] Development of Highly Heat-Resistant, Dry-Etchable Blackening Film for TFT Wiring

*Daisuke Kaneko¹, Keita Umemoto¹, Hiromi Nakazawa¹, Shin Okano¹, Yukiya Sugiuchi¹, Takeshi Ohtomo¹ (1.Mitsubishi Materials Corporation (Japan))

LTPS-TFT, Low reflectivity, Blackening, heat-resistance, dry-etch

https://doi.org/10.36463/idw.2021.0254

We developed blackening material to enhance the heat resistance targeting to LTPS TFTs wiring. Moreover, we investigated the influence of deposition conditions for film properties. Lastly, we also discussed properties of TFT when the blackening material applied to not only the gate electrode but also source/drain electrode.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[FMC7/AIS9-3] Development of Highly Heat-Resistant, Dry-Etchable Blackening Film for TFT Wiring