Investigation of GaN-based Micro-LEDs with Passivation Layers

Wenjun  Huang

doi:https://doi.org/10.36463/idw.2021.0792

17:00 〜 17:20

[MEET3-2(Invited)] Investigation of GaN-based Micro-LEDs with Passivation Layers

Wenjun Huang¹、Mengyuan Zhanghu¹、Yunfang Guan²、Byung-Ryool Hyun¹、Chengfeng Qiu²、*Zhaojun Liu^1,2 (1.Southern University of Science and Technology (China)、2.Shenzhen SiTan Technology Cooperation Limited (China))

GaN-based Micro-LEDs, ALD passivation, Ideality Factor

https://doi.org/10.36463/idw.2021.0792

Micro-light-emitting diodes (Micro-LEDs) with various pixel size and device structures are designed and fabricated based on sapphire substrate. Systematically investigation of GaN-based Micro-LEDs with dielectric layer deposited by atomic layer deposition (ALD) is reported. The devices with ALD passivation and KOH
treatment exhibit better I-V characteristics, smaller ideal factor, and better reliability for high-brightness displays.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[MEET3-2(Invited)] Investigation of GaN-based Micro-LEDs with Passivation Layers