[PHp1-5L] Investigation of Solid-State Devices Using Deep-Ultraviolet Emitting ZnAl2O4 Thin Film
ZnAl2O4 thin film, UV emission, Cathodoluminescence, Electron beam penetration depth
ZnO films were deposited on sapphire substrates by magnetron sputtering and annealed to produce zinc aluminate (ZnAl2O4) deep ultraviolet emitting phosphor thin films by mutual thermal diffusion between film and substrate. We explored the annealing temperature and time to find the optimum conditions in terms of luminescence intensity.