Investigation of Solid-State Devices Using Deep-Ultraviolet Emitting ZnAl<sub>2</sub>O<sub>4 </sub>Thin Film

Naoki Sonoda, Kosuke Inoue, Hiroko Kominami, Kazuhiko Hara, Shunsuke Kurosawa

doi:https://doi.org/10.36463/idw.2021.0334

[PHp1-5L] Investigation of Solid-State Devices Using Deep-Ultraviolet Emitting ZnAl₂O₄Thin Film

*Naoki Sonoda¹, Kosuke Inoue¹, Hiroko Kominami¹, Kazuhiko Hara¹, Shunsuke Kurosawa² (1.Shizuoka University (Japan), 2.Tohoku University (Japan))

ZnAl2O4 thin film, UV emission, Cathodoluminescence, Electron beam penetration depth

https://doi.org/10.36463/idw.2021.0334

ZnO films were deposited on sapphire substrates by magnetron sputtering and annealed to produce zinc aluminate (ZnAl₂O₄) deep ultraviolet emitting phosphor thin films by mutual thermal diffusion between film and substrate. We explored the annealing temperature and time to find the optimum conditions in terms of luminescence intensity.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[PHp1-5L] Investigation of Solid-State Devices Using Deep-Ultraviolet Emitting ZnAl2O4 Thin Film

[PHp1-5L] Investigation of Solid-State Devices Using Deep-Ultraviolet Emitting ZnAl₂O₄Thin Film