International Display Workshops General Incorporated Association

3:10 PM - 3:30 PM

[AMD2-2 (Invited)] Breaking the Mobility-Stability Trade-Off in Oxide TFTs

*Junghwan Kim1, Yu-Shien Shiah1, Katsumi Abe2, Hideo Hosono1,3 (1.Materials Research Center for Element Strategy, Tokyo Institute of Technology (Japan), 2.Silvaco Japan Co., Ltd. (Japan), 3.wpi-MANA, National Institute for Materials Science (Japan))

High-mobility Oxide TFTs, Stability, NBTS, PBTS, NBIS

https://doi.org/10.36463/idw.2022.0124

In this study, we show the sensitivity of amorphous oxide semiconductors to externally introduced impurities and defects is determined by the location of the conduction band minimum and the relevant doping ability. Based on these insights, we develop a highly stable ITZO TFT with mobility of 70 cm2/Vs.