3:10 PM - 3:30 PM
[AMD2-2 (Invited)] Breaking the Mobility-Stability Trade-Off in Oxide TFTs
High-mobility Oxide TFTs, Stability, NBTS, PBTS, NBIS
In this study, we show the sensitivity of amorphous oxide semiconductors to externally introduced impurities and defects is determined by the location of the conduction band minimum and the relevant doping ability. Based on these insights, we develop a highly stable ITZO TFT with mobility of 70 cm2/Vs.