Electric Field Thermopower Modulation Analyses of Transistor Characteristics of High-mobility In-Sn-Zn-O Thin Film Transistors

Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, Hiromichi Ohta

doi:https://doi.org/10.36463/idw.2022.0128

3:30 PM - 3:50 PM

[AMD2-3] Electric Field Thermopower Modulation Analyses of Transistor Characteristics of High-mobility In-Sn-Zn-O Thin Film Transistors

*Hui Yang^1,2, Yuqiao Zhang^3,4, Yasutaka Matsuo¹, Yusaku Magari^1,5, Hiromichi Ohta¹ (1.RIES-Hokkaido University (Japan), 2.Beijing Jiaotong University (China), 3.Jiangsu University (China), 4.Foshan Institute for New Materials (China), 5.Shimane University (Japan))

InSnZnO, transparent thin-film transistor, electric-field thermopower modulation, effective mass, effective thickness

https://doi.org/10.36463/idw.2022.0128

In-Sn-Zn-O thin film transistors (ITZO-TFTs) have attracted increasing attention because they show high μ_FE. Here, we systematically investigated the origins of the high μ_FE of ITZO-TFTs by thermopower modulation. The lighter m* (~0.11 m₀) and longer τ (~3.6 fs) than IGZO are the origins of the high μ_FE of ITZO-TFTs.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[AMD2-3] Electric Field Thermopower Modulation Analyses of Transistor Characteristics of High-mobility In-Sn-Zn-O Thin Film Transistors