International Display Workshops General Incorporated Association

14:50 〜 15:10

[AMD4-1 (Invited)] Three-dimensional Monolithic Micro-LED Display Driven by Atomically Thin Transistor Matrix

*Xinran Wang1,2、Wanqing Meng1、Feifan Xu1,2、Zhihao Yu1,3、Tao Tao1,2、Bin Liu1,2、Yi Shi1,2、Rong Zhang1,2,4,5 (1.Nanjing University (China)、2.Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials (China)、3.Nanjing University of Posts and Telecommunications (China)、4.Xiamen University (China)、5.Institute of Future Display Technology (China))

Micro-LED, MoS2 TFT, Monolithic 3D integration, Active-matrix device

https://doi.org/10.36463/idw.2022.0146

Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. Here, we show the integration of large-area MoS2 thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays at 1270 PPI.