Three-dimensional Monolithic Micro-LED Display Driven by Atomically Thin Transistor Matrix

Xinran Wang

doi:https://doi.org/10.36463/idw.2022.0146

14:50 〜 15:10

[AMD4-1 (Invited)] Three-dimensional Monolithic Micro-LED Display Driven by Atomically Thin Transistor Matrix

*Xinran Wang^1,2、Wanqing Meng¹、Feifan Xu^1,2、Zhihao Yu^1,3、Tao Tao^1,2、Bin Liu^1,2、Yi Shi^1,2、Rong Zhang^1,2,4,5 (1.Nanjing University (China)、2.Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials (China)、3.Nanjing University of Posts and Telecommunications (China)、4.Xiamen University (China)、5.Institute of Future Display Technology (China))

Micro-LED, MoS2 TFT, Monolithic 3D integration, Active-matrix device

https://doi.org/10.36463/idw.2022.0146

Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. Here, we show the integration of large-area MoS₂ thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays at 1270 PPI.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[AMD4-1 (Invited)] Three-dimensional Monolithic Micro-LED Display Driven by Atomically Thin Transistor Matrix