International Display Workshops General Incorporated Association

10:50 AM - 11:10 AM

[AMD6-1 (Invited)] Development of High-Performance Metal Halide Perovskite Thin-Film Transistors

*Yong-Young Noh1 (1.Pohang University of Science and Technology (POSTECH) (Korea))

metal halide perovskite, thin-film transistors, p-type, active matrix display, field-effect mobility

https://doi.org/10.36463/idw.2022.0176

In this talk, I will talk about the tin-based 2D and 3D perovskite semiconductors as promising p-type halides. I will introduce inorganic perovskite thin-film transistors with exceptional performance using high-crystallinity and uniform cesium-tin-triiodide-based semiconducting layers with moderate hole concentrations and superior Hall mobilities, which are enabled by the judicious engineering of film composition and crystallization. The optimized devices exhibit high field-effect hole mobilities of over...