10:50 〜 11:10
[AMD6-1 (Invited)] Development of High-Performance Metal Halide Perovskite Thin-Film Transistors
metal halide perovskite, thin-film transistors, p-type, active matrix display, field-effect mobility
In this talk, I will talk about the tin-based 2D and 3D perovskite semiconductors as promising p-type halides. I will introduce inorganic perovskite thin-film transistors with exceptional performance using high-crystallinity and uniform cesium-tin-triiodide-based semiconducting layers with moderate hole concentrations and superior Hall mobilities, which are enabled by the judicious engineering of film composition and crystallization. The optimized devices exhibit high field-effect hole mobilities of over...