Electrical Characteristics of Solution-processed Hafnium-aluminum Oxide Gate Insulator with Addition of Hydrochloric Acid for a-IGZO Thin-Film Transistors

Jeong Hyun Ahn, Tae Eun Ha, Eun Kyung Jo, Hwarim Im, Yong-Sang Kim

doi:https://doi.org/10.36463/idw.2022.0206

[AMDp1-3] Electrical Characteristics of Solution-processed Hafnium-aluminum Oxide Gate Insulator with Addition of Hydrochloric Acid for a-IGZO Thin-Film Transistors

Jeong Hyun Ahn¹, Tae Eun Ha¹, Eun Kyung Jo¹, *Hwarim Im¹, Yong-Sang Kim¹ (1.Sungkyunkwan University (Korea))

High-k, Hafnium-aluminum oxide, Solution process, a-InGaZnO thin film transistor, Hydrochloric acid

https://doi.org/10.36463/idw.2022.0206

This paper introduces a study on solution-processed HfAlOx dielectric films prepared by different ratios of Hf and Al applied to amorphous indium-gallium-zinc oxide(a-IGZO) thin-film transistors (TFTs). We also investigated the influence of hydrochloric acid (HCl) incorporation on the electrical characteristics of HfAlOx dielectric films.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[AMDp1-3] Electrical Characteristics of Solution-processed Hafnium-aluminum Oxide Gate Insulator with Addition of Hydrochloric Acid for a-IGZO Thin-Film Transistors