[AMDp1-3] Electrical Characteristics of Solution-processed Hafnium-aluminum Oxide Gate Insulator with Addition of Hydrochloric Acid for a-IGZO Thin-Film Transistors
High-k, Hafnium-aluminum oxide, Solution process, a-InGaZnO thin film transistor, Hydrochloric acid
This paper introduces a study on solution-processed HfAlOx dielectric films prepared by different ratios of Hf and Al applied to amorphous indium-gallium-zinc oxide(a-IGZO) thin-film transistors (TFTs). We also investigated the influence of hydrochloric acid (HCl) incorporation on the electrical characteristics of HfAlOx dielectric films.