International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 29 (IDW '22)

Proceedings of the International Display Workshops Volume 29 (IDW '22)

Dec 14, 2022 - Dec 16, 2022
Fukuoka International Congress Center

[AMDp1-6] Enhancement of Field Effect Mobility of RF-sputtered In2O3 Thin Film Transistor by Titanium Floating Metal

*Minsik Kong1, Soobin An1, Chanjin Park1, Soo-Yeon Lee1 (1.Seoul National University (Korea))

Thin film transistor, Ultra thin film transistor, Indium oxide, Floating metal

https://doi.org/10.36463/idw.2022.0217

We demonstrate In2O3 thin film transistors fabricated by RF-magnetron sputtering. The additionally deposited floating metal enhanced the field-effect mobility. TCAD simulation showed current bypassing through the metal layer. Furthermore, potential change might occur at the interface.