International Display Workshops General Incorporated Association

[AMDp1-6] Enhancement of Field Effect Mobility of RF-sputtered In2O3 Thin Film Transistor by Titanium Floating Metal

*Minsik Kong1、Soobin An1、Chanjin Park1、Soo-Yeon Lee1 (1.Seoul National University (Korea))

Thin film transistor, Ultra thin film transistor, Indium oxide, Floating metal

https://doi.org/10.36463/idw.2022.0217

We demonstrate In2O3 thin film transistors fabricated by RF-magnetron sputtering. The additionally deposited floating metal enhanced the field-effect mobility. TCAD simulation showed current bypassing through the metal layer. Furthermore, potential change might occur at the interface.