[AMDp1-6] Enhancement of Field Effect Mobility of RF-sputtered In2O3 Thin Film Transistor by Titanium Floating Metal
Thin film transistor, Ultra thin film transistor, Indium oxide, Floating metal
We demonstrate In2O3 thin film transistors fabricated by RF-magnetron sputtering. The additionally deposited floating metal enhanced the field-effect mobility. TCAD simulation showed current bypassing through the metal layer. Furthermore, potential change might occur at the interface.