Design of Atomic Layer Deposited Oxide Channel Transistor for High-Performance, High-Pixel Density AMOLED

Jae Kyeong Jeong

doi:https://doi.org/10.36463/idw.2022.1051

14:50 〜 15:10

[FLX2-1 (Invited)] Design of Atomic Layer Deposited Oxide Channel Transistor for High-Performance, High-Pixel Density AMOLED

*Jae Kyeong Jeong¹、Jae Seok Hur¹、Hyeon Joo Seul¹、Min Hoe Cho¹ (1.Hanyang Univ. (Korea))

oxide semiconductor, atomic layer deposition, high mobility

https://doi.org/10.36463/idw.2022.1051

In this paper, we will address the design of oxide semiconductor on basis of atomic layer deposition for high-performance, high-pixel density AMOLED. The 2DEG concept can be demonstrated in ALD-based oxide TFTs, which renders the exceptional high field-effect mobility (>70 cm²/Vs) and excellent PBTS/NBTS stability.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[FLX2-1 (Invited)] Design of Atomic Layer Deposited Oxide Channel Transistor for High-Performance, High-Pixel Density AMOLED