International Display Workshops General Incorporated Association

15:50 〜 16:10

[FLX2-4L (Invited)] New Structure of High Current Driving Oxide TFT for Ultra-High Resolution Display

*Sang-Hee Ko Park1、Do Hyung Kim1、Junsung Kim1、Junghoon Yang1、Jingyu Kim1、Seong-In Cho1 (1.Korea Advanced Institute of Science and Technology (Korea))

Trench TFT, high current driving, ultra-high resolution

https://doi.org/10.36463/idw.2022.1062

We introduce new structure of oxide TFT providing high current in a small footprint and suitable for the flexible display. Introduction of trench within the channel results in the thickness difference of semiconductors in the vertical and lateral regions. While the thicker lateral region of oxide semiconductor plays as a high current path, thin two vertical channels function as the semiconductors to yield acceptable Von with...