Electron Affinity Control of Zinc Silicon Oxide Nanoparticles for Electron Transport Layer in OLEDs and QLEDs

Satoru Watanabe, Hikaru Kobayashi, Haruhiko Yoshino, Masaya Kunigita, Takaaki Murakami, Yusuke Mori, Yasuhiro Sanada, Nobuhiro Nakamura

doi:https://doi.org/10.36463/idw.2022.0259

2:00 PM - 2:20 PM

[FMC1-4L] Electron Affinity Control of Zinc Silicon Oxide Nanoparticles for Electron Transport Layer in OLEDs and QLEDs

*Satoru Watanabe¹, Hikaru Kobayashi¹, Haruhiko Yoshino¹, Masaya Kunigita¹, Takaaki Murakami¹, Yusuke Mori¹, Yasuhiro Sanada¹, Nobuhiro Nakamura¹ (1.AGC Inc. (Japan))

nanoparticles, inorganic ETL, inkjet printed OLED, quantum dot light emitting diode

https://doi.org/10.36463/idw.2022.0259

Nanoparticles of transparent semiconducting zinc silicon oxide, with diameter below 4 nm, were found to exhibit a variety of electron affinity ranging from 3.6 eV to 2.7 eV, by altering Si content. Resulting nanoparticles can be dispersed in glycol solvents, showing a good surface flatness in the spin-coated films.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[FMC1-4L] Electron Affinity Control of Zinc Silicon Oxide Nanoparticles for Electron Transport Layer in OLEDs and QLEDs