International Display Workshops General Incorporated Association

[FMCp3-1] Zinc Tin Oxide Synaptic Transistor with Ion-gel in Different Concentrations for Neuromorphic Application

Yu-Wu Wang1、Wen-Yu Liao1、*Chen En Zhang1、Yu-Hong Xie1、Pei-Yun Huang1、Yu-Han Cheng1 (1.National Chan-Hua University of Education (Taiwan))

artificial synapses, Ion-gel, synaptic transistors, neuromorphic devices

https://doi.org/10.36463/idw.2022.0346

The component of three-terminal bionic neural based on zinc-tin-oxide semiconductor (ZTO) with Ion-gel in three different concentrations as the insulating layer was fabricated in this paper. We proved the short-term plasticity (STP) characteristic was increased with the addition of [EMIM][TFSI], where the best paired-pulse facilitation (PPF) ratio was 162 %.