[FMCp3-1] Zinc Tin Oxide Synaptic Transistor with Ion-gel in Different Concentrations for Neuromorphic Application
artificial synapses, Ion-gel, synaptic transistors, neuromorphic devices
The component of three-terminal bionic neural based on zinc-tin-oxide semiconductor (ZTO) with Ion-gel in three different concentrations as the insulating layer was fabricated in this paper. We proved the short-term plasticity (STP) characteristic was increased with the addition of [EMIM][TFSI], where the best paired-pulse facilitation (PPF) ratio was 162 %.