International Display Workshops General Incorporated Association

[FMCp3-3] A Study of Spin Coated a-IGZO TFT with Y-doped ZrO2 Gate Insulators

EunKyung Jo1, Jeong Hyun Ahn1, Tae Eun Ha1, *Eunho Kim1, Hwarim Im1, Yong-Sang Kim1 (1.Sungkyunkwan University (Korea))

Y-doped ZrO2, a-IGZO TFT, Solution Process, High-k

https://doi.org/10.36463/idw.2022.0354

In this study, an indium gallium zinc oxide (IGZO) thin-film transistor (TFT) based on Yttrium-doped ZrO2 dielectric was studied. We revealed that a-IGZO/1:8 Y-doped ZrO2 TFT deteriorated compared to a-IGZO/ZrO2 TFT. On the other hand, a-IGZO/1:2 Y-doped ZrO2 TFT had better overall properties than a-IGZO/ ZrO2 TFT.