Quantitative Evaluation of Low-temperature Si Oxide Films by Derivative FT-IR Spectra

Susumu Horita, Di Pu

doi:https://doi.org/10.36463/idw.2022.0361

[FMCp3-5L] Quantitative Evaluation of Low-temperature Si Oxide Films by Derivative FT-IR Spectra

*Susumu Horita¹, Di Pu¹ (1.Japan Advanced Institute of Science and Technology (Japan))

Si oxide films, FT-IR, derivative spectra, OH, low-temperature

https://doi.org/10.36463/idw.2022.0361

Using derivative FT-IR spectra of Si oxide films deposited at 160 to 250 ^oC, a peak due to Si-OH bond around 940 cm^-1 was evaluated quantitatively. From this, amount of the residual OH is qualified more effectively, compared with normal spectra. However, further correction is needed for closer analysis.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[FMCp3-5L] Quantitative Evaluation of Low-temperature Si Oxide Films by Derivative FT-IR Spectra