Metal-assisted Direct Growth of CVD Graphene on GaN as Transparent Electrodes

Penghao Tang

doi:https://doi.org/10.36463/idw.2022.0868

15:50 〜 16:10

[MEET2-4 (Invited)] Metal-assisted Direct Growth of CVD Graphene on GaN as Transparent Electrodes

Penghao Tang¹、Fangzhu Xiong¹、Zaifa Du¹、Kai Li¹、Yu Mei¹、Weiling Guo¹、Qun Yan²、*Jie Sun^1,2 (1.Beijing University of Technology (China)、2.Fuzhou University (China))

graphene, LED, GaN, transparent electrode

https://doi.org/10.36463/idw.2022.0868

This paper reports a metal assisted process for the direct growth of CVD graphene on GaN LED epiwafers. The metal layer was introduced as both the mask and catalyst, which was subsequently removed in a penetration etching process. This provides a solution for the integration of graphene and GaN devices.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[MEET2-4 (Invited)] Metal-assisted Direct Growth of CVD Graphene on GaN as Transparent Electrodes