Highly Efficient Green InP Quantum Dot Light-Emitting Diodes by Enhancing Carrier Injection

Kai Wang, Tianqi Zhang, Pai Liu, Fangqing Zhao, Yangzhi Tan, Jiayun Sun, Xiangtian Xiao, Zhaojing Wang, Qingqian Wang, Fankai Zheng, Xiao Wei Sun, Dan Wu, Guichuan Xing

doi:https://doi.org/10.36463/idw.2022.0898

1:20 PM - 1:40 PM

[MEET5-2 (Invited)] Highly Efficient Green InP Quantum Dot Light-Emitting Diodes by Enhancing Carrier Injection

*Kai Wang^1,2, Tianqi Zhang^1,2,3, Pai Liu^1,2, Fangqing Zhao^1,2, Yangzhi Tan^1,2, Jiayun Sun^1,2, Xiangtian Xiao^1,2, Zhaojing Wang^1,2, Qingqian Wang^1,2, Fankai Zheng^1,2, Xiao Wei Sun^1,2, Dan Wu⁴, Guichuan Xing³ (1.Southern University of Science and Technology (China), 2.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology) (China), 3.University of Macau (China), 4.Shenzhen Technology University (China))

quantum dot, light-emitting diode, carrier injection

https://doi.org/10.36463/idw.2022.0898

Enhancing carrier injection is essential to indium phosphide (InP) quantum dot light-emitting diodes (QLEDs). Here, we have applied electron transport layer (ETL) with higher electron mobility and introduced a MoO3 electric dipole layer to enhance the carrier injection. The optimized green InP QLED had achieved a 1.7 times EQE enhancement.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[MEET5-2 (Invited)] Highly Efficient Green InP Quantum Dot Light-Emitting Diodes by Enhancing Carrier Injection