International Display Workshops General Incorporated Association

13:20 〜 13:40

[MEET5-2 (Invited)] Highly Efficient Green InP Quantum Dot Light-Emitting Diodes by Enhancing Carrier Injection

*Kai Wang1,2、Tianqi Zhang1,2,3、Pai Liu1,2、Fangqing Zhao1,2、Yangzhi Tan1,2、Jiayun Sun1,2、Xiangtian Xiao1,2、Zhaojing Wang1,2、Qingqian Wang1,2、Fankai Zheng1,2、Xiao Wei Sun1,2、Dan Wu4、Guichuan Xing3 (1.Southern University of Science and Technology (China)、2.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology) (China)、3.University of Macau (China)、4.Shenzhen Technology University (China))

quantum dot, light-emitting diode, carrier injection

https://doi.org/10.36463/idw.2022.0898

Enhancing carrier injection is essential to indium phosphide (InP) quantum dot light-emitting diodes (QLEDs). Here, we have applied electron transport layer (ETL) with higher electron mobility and introduced a MoO3 electric dipole layer to enhance the carrier injection. The optimized green InP QLED had achieved a 1.7 times EQE enhancement.